Talalaev, R.A. : rechercher sur Z-Library

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1

Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

Peter Storck, Martin Vorderwestner, Alexey Kondratyev, Roman Talalaev, Art Amamchyan, Egbert Woelk

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2010

2

MOVPE process for horizontal reactors with reduced parasitic deposition

H. Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 504 KB

english, 2004

3

Optimization of deposition uniformity during silicon epitaxy in deep trenches

Segal, Alexander, Yakovlev, Eugene, Bazarevskiy, Denis, Talalaev, Roman, Ziad, Hocine, Genne, Jelle, Koops, Gerhard, Meersman, Johan, De Pestel, Freddy, Tack, Marnix

Journal:

Semiconductor Science and Technology

Année:

2018

Langue:

english

Fichier:

PDF, 829 KB

english, 2018

4

Modeling of bulk GaN crystal growth from gallium-sodium solution

Vorob'ev, Andrei, Kondratyev, Alexey, Kalaev, Vladimir, Talalaev, Roman

Journal:

Journal of Crystal Growth

Année:

2020

Fichier:

PDF, 7.35 MB

2020

5

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

K.M. Mazaev, A.V. Lobanova, E.V. Yakovlev, R.A. Talalaev, A.O. Galyukov, Yu.N. Makarov, D. Gotthold, B. Albert, L. Kadinski, B. Peres

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 394 KB

english, 2004

6

Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, B.S. Yavich, W.N Wang

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 422 KB

english, 2004

7

Kinetics of SiGe chemical vapor deposition from chloride precursors

A.A. Lovtsus, A.S. Segal, A.P. Sid’ko, R.A. Talalaev, P. Storck, L. Kadinski

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 315 KB

english, 2006

8

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

M. Dauelsberg, C. Martin, H. Protzmann, A.R. Boyd, E.J. Thrush, J. Käppeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 507 KB

english, 2007

9

Analysis of silicon carbide growth by sublimation sandwich method

S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, R.A. Talalaev, Yu.A. Vodakov

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 715 KB

english, 1997

10

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov, J.-T. Zettler

Journal:

physica status solidi (a)

Année:

2004

Langue:

english

Fichier:

PDF, 317 KB

english, 2004

11

The quantum Gaudin system

Journal:

Functional Analysis and Its Applications

Année:

2006

Langue:

english

Fichier:

PDF, 122 KB

english, 2006

12

Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, G. É. Tsyrlin, N. D. Zakharov

Journal:

Physics of the Solid State

Année:

2007

Langue:

english

Fichier:

PDF, 264 KB

english, 2007

13

Hitchin System on Singular Curves

D. V. Talalaev, A. V. Chervov

Journal:

Theoretical and Mathematical Physics

Année:

2004

Langue:

english

Fichier:

PDF, 364 KB

english, 2004

14

Sb mediated formation of Ge/Si quantum dots: Growth and properties

A.A. Tonkikh, N.D. Zakharov, A.V. Novikov, K.E. Kudryavtsev, V.G. Talalaev, B. Fuhrmann, H.S. Leipner, P. Werner

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 496 KB

english, 2012

15

Interdot carrier transfer in asymmetric bilayer InAsâGaAs quantum dot structures

Mazur, Yu. I., Wang, Zh. M., Tarasov, G. G., Xiao, Min, Salamo, G. J., Tomm, J. W., Talalaev, V., Kissel, H.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 278 KB

english, 2005

16

Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

Senichev, Alexander V., Talalaev, Vadim G., Shtrom, Igor V., Blumtritt, Horst, Cirlin, George E., Schilling, Jörg, Lienau, Christoph, Werner, Peter

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 3.26 MB

english, 2014

17

[IEEE 2011 IEEE 8th International Conference on Group IV Photonics (GFP) - London, United Kingdom (2011.09.14-2011.09.16)] 8th IEEE International Conference on Group IV Photonics - Sb mediated Ge/Si(100) quantum dots for Si based photonics

Tonkikh, A.A., Zakharov, N.D., Novikov, A.V., Kudryavtsev, K., Talalaev, V.G., Fuhrmann, B., Leipner, H.S., Davydov, V. Yu., Smirnov, A.N., Werner, P.

Année:

2011

Langue:

english

Fichier:

PDF, 259 KB

english, 2011

18

Transient spectroscopy of InAs quantum dot molecules

Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Novikov, B. V., Tonkikh, A. A.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 523 KB

english, 2004

19

Optically pumped semiconductor disk laser with graded and step indices

Saas, Florian, Talalaev, Vadim, Griebner, Uwe, Tomm, Jens W., Zorn, Martin, Knigge, Andrea, Weyers, Markus

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 390 KB

english, 2006

20

Cold metal transfer (CMT) welding of thin sheet metal products

Talalaev, R, Veinthal, R, Laansoo, A, Sarkans, M

Journal:

Estonian Journal of Engineering

Année:

2012

Langue:

english

Fichier:

PDF, 4.25 MB

english, 2012

21

Problem of constructing wide-band acoustooptic deflectors

I. A. Deryugin, A. P. Pogibel'skiĭ, M. A. Talalaev, G. E. Teterin

Année:

1980

Langue:

english

Fichier:

PDF, 204 KB

english, 1980

22

On the Possible Origins of Low Indium Incorporation during MOVPE of InGaN

R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, I. Yu. Estratov, A. N. Vorobev, Yu. N. Makarov

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 118 KB

english, 1999

23

Growth Kinetics of GaN in Ammonia Atmosphere

S. Yu Karpov, R. A. Talalaev, Yu. N. Makarov, N. Grandjean, J. Massies, B. Damilano

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 150 KB

english, 1999

24

Indium Incorporation and Droplet Formation during InGaN Molecular Beam Epitaxy

O. V. Bord, R. A. Talalaev, S. Yu. Karpov, Yu. N. Makarov

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 120 KB

english, 1999

25

Radiative Recombination Features of Metastable Quantum Dot Array

V.G. Talalaev, B.V. Novikov, G. Gobsch, R. Goldhahn, N. Stein, J.W. Tomm, A. Maassdorf, G.E. Cirlin, V.N. Petrov, V.M. Ustinov

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 91 KB

english, 2001

26

Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

G.E. Cirlin, V.G. Talalaev, N.D. Zakharov, V.A. Egorov, P. Werner

Journal:

physica status solidi (b)

Année:

2002

Langue:

english

Fichier:

PDF, 127 KB

english, 2002

27

Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures

S.Yu. Karpov, R.A. Talalaev, I.Yu. Evstratov, Yu.N. Makarov

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 163 KB

english, 2002

28

On improving the estimates of the solutions of the system of linear differential equations with variable coefficients

A.G. Piliutik, P.A. Talalaev

Journal:

Journal of Applied Mathematics and Mechanics

Année:

1965

Langue:

english

Fichier:

PDF, 443 KB

english, 1965

29

Microscopic Si whiskers

S. Kalem, P. Werner, M. Hagberg, B. Nilsson, V. Talalaev, Ö. Arthursson, H. Frederiksen, U. Södervall

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 499 KB

english, 2011

30

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

A.V. Kondratyev, R.A. Talalaev, W.V. Lundin, A.V. Sakharov, A.V. Tsatsul’nikov, E.E. Zavarin, A.V. Fomin, D.S. Sizov

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 204 KB

english, 2004

31

Effect of V/III ratio in AlN and AlGaN MOVPE

A.V. Lobanova, K.M. Mazaev, R.A Talalaev, M. Leys, S. Boeykens, K. Cheng, S. Degroote

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 321 KB

english, 2006

32

Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsin, A.F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 172 KB

english, 2006

33

Influence of the reactor inlet configuration on the AlGaN growth efficiency

E.V. Yakovlev, R.A. Talalaev, N. Kaluza, H. Hardtdegen, H.L. Bay

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 417 KB

english, 2007

34

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

C. Martin, M. Dauelsberg, H. Protzmann, A.R. Boyd, E.J. Thrush, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 372 KB

english, 2007

35

Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates

T. Kunz, I. Burkert, R. Auer, A.A. Lovtsus, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 619 KB

english, 2008

36

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, R.A. Talalaev, A.S. Segal, A.V. Lobanova, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.F. Tsatsulnikov, A.E. Nikolaev

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 374 KB

english, 2008

37

Growth conditions and surface morphology of AlN MOVPE

A.V. Lobanova, E.V. Yakovlev, R.A Talalaev, S.B. Thapa, F. Scholz

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 219 KB

english, 2008

38

On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 134 KB

english, 2001

39

Analysis of gallium nitride growth by gas-source molecular beam epitaxy

S.Yu Karpov, Yu.N Makarov, M.S Ramm, R.A Talalaev

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 105 KB

english, 1998

40

Benchmarking of evaluated nuclear data for bismuth by spherical shell transmission experiments with central T(d,n) and Cf-252 neutron sources

S.P Simakov, B.V Devkin, M.G Kobozev, V.A Talalaev, U von Möllendorff

Journal:

Fusion Engineering and Design

Année:

1999

Langue:

english

Fichier:

PDF, 192 KB

english, 1999

41

Gallium droplet formation during MOVPE and thermal annealing of GaN

S.Yu Karpov, O.V Bord, R.A Talalaev, Yu.N Makarov

Journal:

Materials Science and Engineering: B

Année:

2001

Langue:

english

Fichier:

PDF, 95 KB

english, 2001

42

Analysis of vaporization kinetics of group-III nitrides

M.V. Averyanova, I.N. Przhevalskii, S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 511 KB

english, 1997

43

Control of SiC growth and graphitization in sublimation sandwich system

S.Yu. Karpova, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 448 KB

english, 1997

44

Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix

George E. Cirlin, Vadim G. Talalaev, Vyatcheslav A. Egorov, Nikolai D. Zakharov, Peter Werner, Nikolai N. Ledentsov, Victor M. Ustinov

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2003

Langue:

english

Fichier:

PDF, 592 KB

english, 2003

45

Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner

Journal:

physica status solidi (a)

Année:

2003

Langue:

english

Fichier:

PDF, 92 KB

english, 2003

46

Room temperature electroluminescence from multilayer GeSi heterostructures

A. A. Tonkikh, G. E. Cirlin, V. G. Talalaev, N. D. Zakharov, P. Werner

Journal:

physica status solidi (a)

Année:

2006

Langue:

english

Fichier:

PDF, 164 KB

english, 2006

47

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin

Journal:

physica status solidi (b)

Année:

2010

Langue:

english

Fichier:

PDF, 250 KB

english, 2010

48

Front Cover (Phys. Status Solidi B 2/2010)

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin

Journal:

physica status solidi (b)

Année:

2010

Fichier:

PDF, 867 KB

2010

49

Indium Segregation in MOVPE Grown InGaN-Based Heterostructures

R.A. Talalaev, S.Yu. Karpov, I.Yu. Evstratov, Yu.N. Makarov

Journal:

physica status solidi (c)

Année:

2003

Langue:

english

Fichier:

PDF, 70 KB

english, 2003

50

Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

E. V. Yakovlev, R. A. Talalaev, R. W. Martin, C. Jeynes, N. Peng, C. J. Deatcher, I. M. Watson

Journal:

physica status solidi (c)

Année:

2006

Langue:

english

Fichier:

PDF, 176 KB

english, 2006